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datasheet
2N4033 transistor
2N4033 equivalent
2N4033 spice
MECHANICAL DATA
Dimensions in mm (inches)
HIGH SPEED MEDIUM VOLTAGE SWITCH
8. 8 9 (0. 3 5)
9. 4 0 (0. 3 7)
7. 7 5 (0. 305)
8. 5 1 (0. 335)
5. 0 8 (0. 200)
4. 1 9 (0. 165)
4. 9 5 (0. 195)
12. 70 (0 . 5 0 0 ) mi n .
0. 89 max . (0 . 0 35 )
7. 7 5 (0. 305)
8. 5 1 (0. 335)
0. 6 6 (0. 026)
1. 1 4 (0. 045)
0. 7 1 (0. 028)
0. 8 6 (0. 034)
2. 54 (0 . 1 0 0 )
DESCRIPTION
The 2N4033 is a silicon expitaxial planar PNP transistors in
jedec TO-39 metal case intended for use in switching
applications.
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS Tcase = 25°c unless otherwise
stated
VCEO Collector – Emitter Voltage VCBO Collector – Base
Voltage VEBO Emitter – Base Voltage
IC Continuous Collector Current
PD Total Device Dissipation at TA 25°C Derate above 25°C
PD Total Device Dissipation at TC 25°C Derate above 25°C
4.56 mW/°C
22.8mW/°C
Tstg Operating and Storage Temperature Range
–65 to +200°C
THERMAL CHARATERISTICS
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise
stated)
Parameter Test Conditions Min. Typ. Max. Unit
ICBO IEBO VCE(sat) VBE(sat)
VBE(on)
V(BR)CEO V(BR)CBO V(BR)EBO
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage1
Base Emitter Saturation Voltage1
Base Emitter on Voltage
Collector Emitter Breakdown Voltage Collector Base Breakdown
Voltage Emitter Base Breakdown Voltage
DC Current Gain
VCB = -60V TA = 150°C VEB = -5V
IC = -150mA IB = -15mA IC = -500mA
IB = -50mA IC = -150mA IB = -15mA
IC = -500mA VCE = -0.5V1
IC = -10mA IC = -10A IE = -10A
IC = -100mA VCE = -5.0V
@-55°C1
IC = -100A VCE = -5.0V
-50 nA
-1.1 V V V V
SMALL SIGNAL CHARACTERISTICS
IC = -100mA VCE = -5.0V1
IC = -500mA VCE = -5.0V1
IC = -1.0A VCE = -5.0V1
100 300
Output Capacitance
Input Capacitance
Small Signal Gain
VCE = -10V f = 1MHz
VEB = -0.5V f = 1MHz
IC = -50mA VCE = -10V
f = 100MHz
1.5 5.0 —
SWITCHING CHARACTERISTICS
Turn On Time
Fall Time
Storage Time
IC = -500mA IB1=-IB2 = -50mA
1Pulse test tp = 300s , = 1%